Institute of High Performance Computing

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People

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Material Science & Engineering (MSE)

Dr. GAN Chee Kwan

Dr. GAN Chee Kwan


Research Interests:

  • First-principles calculations of Group III-V semiconductors: alloys and surfaces
  • Linear scaling electronic structure theory
  • Massive parallelism for electronic structure calculations

Qualifications:

  • Ph.D., University of Cambridge, UK, 2001
  • M.Sc., National University of Singapore, 1997
  • B.Sc., National University of Singapore, 1995

Published Journals/ Articles:

Journals

    • J.-S. Wang, N. Zeng, J. Wang, and C. K. Gan, Nonequilibrium Green’s function method for thermal transport in junctions, Physical Review E, 75 (2007) 61128
       
    • C. K. Gan, Y. P. Feng, and D. J. Srolovitz, First-principles calculation of the thermodynamics of InGaN alloys: Effect of lattice vibrations, Physical Review B, 73 (2006) 235214
       
    • C. K. Gan, C. J. Tymczak, and M. Challacombe, Linear scaling computation of Fock matrix. VII. Parallel computation of the Coulomb matrix , Journal of Chemical Physics, 121  (2004) 6608 .
       
    • C. K. Gan, T.D. Sewell, and M. Challacombe, All-electron density-functional studies of hydrostatic compression of pentaerythritol tetranitrate , Physical Review B, 68 (2004) 035116.
       
    • C. K. Gan and M. Challacombe, Linear scaling computation of the Fock matrix. VI. Data parallel computation of the exchange-correlation matrix , Journal of Chemical Physics, 118  (2003) 9128 .
       
    • C. K. Gan, P. D. Haynes, and M. C. Payne, First-principles density-functional calculations using localized spherical-wave basis sets , Physical Review B, 63 (2001) 205109.

This page is last updated at: 24-APR-2013