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Material Science & Engineering (MSE)

Dr. Valeri LIGATCHEV

Dr. Valeri LIGATCHEV


Research Interests:

  • Solid State Physics
  • Semi-empirical simulations of density of single-electron states
  • Mathematical aspects of physical experiments data analysis

Qualifications:

  • Dr.Sc. (Equivalent of Habilitation), Physics and Mathematics (Physics of Semiconductors and Insulators), Moscow Power Engineering Inst., Russia, 1998
  • Ph.D., Physics and Mathematics (Physics of Semiconductors and Insulators), Moscow Power Engineering Inst., Russia, 1988
  • MS Electronic Engineering (Semiconductors and Insulators), Moscow Power Engineering Inst., USSR, 1982

Published Journals/ Articles:

Journals

    • V. Ligatchev, T.K.S. Wong. On Distributions of Defect States in Low-k Carbon Doped Silicon Dioxide Films in Vicinity of Fermi Level, Electrochemical and Solid State Letters, vol.7, No 12, F89-F92 (2004). Abstract
    • V. Ligatchev, Rusli, Zhao Pan. Density of defect states of aluminum nitride grown on silicon and silicon carbide substrates at room temperature, Applied Physics Letters, vol. 87, No. 24, 242903 (2005). Abstract
    • V. Ligatchev, B. Gan, Morphology, optical properties and single-electron spectrum of ‘detector-quality’ polycrystalline diamond layers, prepared by MW CVD. Diamond and Related Materials, Vol. 15, Issues 2-3, p.p. 410-416 (2006). Abstract

    • V. Ligatchev, K.P. Ong, P.Wu, Simulations on effects of granular morphology on single-electron and optical spectra of nano- and micro-crystalline AlN and diamond, Diamond and Related Materials, Vol. 16, p.p. 784-789 (2007). Abstract

    • V. Ligatchev, K.P. Ong, P.Wu, K. Ostrikov,On Natures of Sub-Gap Photoelectric and Optical Spectra in Nitrogen-Contaminated Nano-crystalline Diamond, ECS Transactions, vol. 6, Issue 16, p.p. 101- 106 (2007). Abstract

    • V. Ligatchev, Morphology, Acoustic Phonon Confinement, Phonon-induced Strain and Dielectric Permittivity of Nominally Undoped Nano- and Micro-Crystalline Diamond, ECS Transactions vol. 13, Issue 14, p.p. 49-54 (2008).Abstract

    • Lei Shen, Shuo-Wang Yang, Man-Fai Ng, Valeri Ligatchev, Liping Zhou,Yuanping Feng,Charge-Transfer-Based Mechanism for Half-Metallicity and Ferromagnetism in One-Dimensional Organometallic Sandwich Molecular Wires,Journal of American Chemical Society, vol. 130, Issue 42, p.p. 13956–13960 (2008).Abstract

      Valeri Ligatchev, Li Yun Sim, Man-Fai Ng, Xian Ning Xie and Shuo-Wang Yang, ‘Role of hydroxyl groups in the formation of defect configurations in silicon devices’ Journal of Physics D: Applied Physics, vol. 41, 245407 (5pp) (2008). Abstract

      S.-K. Chin, V. Ligatchev, Effects of Spatial and Spectral Characteristics of Electrons on Quantum Capacitance Oscillations in Silicon NanoWire-Based MOS Structure, ECS Transactions vol. 16, Issue 33, p.p. 27-32 (2009).

      S.-K. Chin, V. Ligatchev, Capacitance Oscillations in Cylindrical Nanowire Gate-All-Around MOS Devices at Low Temperatures, IEEE Electron Device Letters, vol. 30, Issue 4, 395-397 (2009). Abstarct

      Ping Wu, Valeri Ligatchev, Zhi Gen Yu, Jianwei Zheng, Michael B. Sullivan, and Yingzhi Zeng, Defects in codoped NiO with gigantic dielectric response, Phys. Rev. B vol. 79, Issue 23, 235122�(2009). Abstarct

      S. K. Chin, V. Ligatchev, S.C. Rustagi, H. Zhao, G. S. Samudra, Navab Singh, G. Q. Lo, Dim-Lee Kwong ‘Self-consistent Schr�dinger-Poisson simulations on capacitance-voltage characteristics of silicon nanowire gate-all-round MOS devices with experimental comparisons’, IEEE Transactions on Electron Device, vol.56 No.10 pp 2312-2318 (2009). Abstract

      V. Ligatchev, S. K. Chin ‘Regularization Algorithm for DOS Spectrum Deconvolution From�C(V) and Q(V) Dependencies of Si Nanowire-Based MOS Structure’, The Electrochemical Society Transactions, vol. 25, No. 10, pp 19-27 (2009). Abstarct

Conferences

    • V. Ligatchev, K.P. Ong, P. Wu, On Natures of Sub-Gap Photoelectric and Optical Spectra in Nitrogen-Contaminated Nanocrystalline Diamond, Oral presentation on 211th ECS Meeting - Chicago, Illinois, May 06 - 10, 2007, Abstract #1169.

    • V. Ligatchev, Features of "mu-tau" spectrum for electrons in nitrogen-contaminated nano-diamond films, poster presentation on 18‘th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes and Nitrides. 9-14 September 2007, Berlin, Germany. Abstract P1.03.30.

    • V. Ligatchev, K.P. Ong, P. Wu, Morphology and room-temperature optical parameters of micro- and nano-crystalline AlN, As previous, Abstract P2.21.18.

    • S.-K. Chin, V. Ligatchev, Effects of spatial and spectral characteristics of electrons on quantum capacitance oscillations in silicon nano-wire-based MOS structure, Oral presentation on PRiME 2008: 214th ECS Meeting / 2008 Fall Meeting of The Electrochemical Society of Japan: Honolulu, Hawaii, USA (Oct 2008), Abstarct #2130.

    • V. Ligatchev, Electronic Spectrum and Dielectric Properties of Lithium- and Titanium- Co-Doped Nickel-Oxide (LTNO) Ceramics 2nd IHPC Symposium, Singapore (Nov 2008).

    • V. Ligatchev and S. K. Chin, Regularization Algorithm for DOS Spectrum Deconvolution from Low-Temperature C(V) Dependencies of SiNW-based MOS Structure, Abstract of 1st NanoToday Conference, Biopolis, Singapore, 2-5th August 2009.

    • Ping Wu, Valeri Ligatchev, Zhi Gen Yu, Jianwei Zheng, Michael B. Sullivan, and Yingzhi Zeng, How can a homogeneous semiconductor exhibit gigantic dielectric response? Invited Talk on 5th Conference of Asian Consortium on Computational Materials Science (ACCMS5) in Hanoi, Vietnam, on September 7th-11th 2009.

    • V. Ligatchev and S. Chin, DOS Spectrum Deconvolution from C(Vg) and Q(Vg) Dependencies of Si Nanowire-based MOS Structure, Abstract of 216th Meeting of The Electrochemical Society, Symposia E6 - One-Dimensional Nanoscale Electronic and Photonic Devices 3 - Vienna, Austria, October 4th-9th 2009.

Book Chapter(s)

    Valeri Ligatchev, "Morphology, Phonon Confinement, Electron Spectrum and Optical Properties of Non-Homogeneous DLC, a Si:H and a-SiC:H Films", In: " Focus on Condensed Matter Physics Research’, Ed. by John V. Chang, Nova Science Publishers, Hauppauge, N.Y. (2005) pp. 1-81, ISBN: 1-59454-419-0

    Valeri Ligatchev, ‘Morphology, single-electron spectrum and macroscopic properties of nano- and micro-crystalline diamond films and powders’ In: ‘Diamond and Related Materials Research’ Ed. by Shota Shimizu, Nova Science Publishers, Hauppauge, N.Y. (2008) pp. 21-78, ISBN: 978-1-60456-145-6

Book(s)

    Valeri Ligatchev, ‘Polycrystalline and Spatially Non-Homogenous Amorphous Semiconductors’ – Nova Science Publishers, Hauppauge N.Y. (2008); 144 pages; ISBN: 978-1-60456-371-9

Other(s)

    Selected to be include to Marquis 2010 Edition of Who"s Who in the World


This page is last updated at: 26-NOV-2010